CAS No.: | 75-73-0 |
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Formula: | CF4 |
EINECS: | 200-896-5 |
Constituent: | Industrial Pure Air |
Grade Standard: | Industrial Grade |
Chemical Property: | Non-Flammable Gas |
Customization: |
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Application of SF4:
carbon tetrafluoride is the largest amount of plasma etching gas in the microelectronics industry at present. It is a mixture of high purity gas and high purity oxygen of carbon tetrafluoride. It can be widely used in the etching of silicon, silicon dioxide, silicon nitride, phosphorous silicon glass and tungsten film materials.Item | Index | ||
CF4, %(V/V)≥ | 99.999 | 99.995 | 99.99 |
N2, 10-6(V/V) ≤ | 4 | 20 | 40 |
O2, 10-6(V/V) ≤ | 1 | 5 | 10 |
CO2, 10-6(V/V) ≤ | 1 | 5 | 10 |
CO, 10-6(V/V) ≤ | 0.3 | 0.5 | 1 |
SF6, 10-6(V/V) ≤ | 1 | 1 | 5 |
H2O, 10-6(V/V) ≤ | 1 | 5 | 10 |
HF, 10-6(V/V) ≤ | 0.1 | 0.3 | 0.3 |
TFC(CH2F2,CHF3,C2F3,C3F8),10-6(V/V) ≤ | 1 | 10 | 30 |
Total impurity content, ppm (V/V) ≤ | 10 | 50 | 100 |
Parameter Critical Assay |
Unit | Company Specification |
Analysis Results |
Analysis Method |
Tetrafluoromethane (CF4) | %(v/v) | 99.999% Min | >99.999% | G.C |
Oxygen(O2) | v.ppm | <1.0 | <0.2 | G.C |
Nitrogen(N2) | v.ppm | <1.0 | <0.6 | G.C |
Carbon Monoxide(CO) | v.ppm | <0.5 | <0.2 | G.C |
Carbon Dioxide(CO2) | v.ppm | <0.5 | <0.2 | G.C |
Sulfur Hexafluoride(SF6) | v.ppm | <0.2 | <0.1 | G.C |
Trifluoromethane(CHF3) | v.ppm | <0.5 | <0.1 | G.C |
Other Halocarbon(OFC)* | v.ppm | <1.0 | <0.7 | G.C |
Total Hydrocarbon(THC)* | v.ppm | <0.5 | <0.1 | G.C |
Moisture(H2O) | v.ppm | <0.5 | <0.2 | Moisture Analyzer |
Acidity(as HF) | v.ppm | <0.1 | <0.08 | Acidity Analyzer |
Total Contents Of Impurity | v.ppm | ≤10.0 | <10.0 | G.C |
Particale(>0.1μm) | pcs/liter | <10.0 | <1.0 | ICP-MS |
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